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awt6638 help3dc tm (band 8) lte/wcdma linear pa module preliminary data sheet - rev 1.3 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 1: block diagram features ? wcdma/hspa, lte compliant ? 3 rd generation help tm technology ? high effciency: (r99 waveform) ? 40 % @ p out = +28.5 dbm ? 22 % @ p out = +17 dbm ? simpler calibration with only 2 bias modes ? optimized for smps supply ? low quiescent current: 9 ma ? low leakage current in shutdown mode: <5 a ? internal voltage regulator ? integrated daisy chainable directional couplers with cpl in and cpl out ports ? optimized for a 50 ? system ? low profle miniature surface mount package ? internal dc blocks in/out rf ports ? 1.8 v control logic ? rohs compliant package, 260 o c msl-3 applications ? wcdma/hspa/lte 900 mhz band wireless handsets and data devices product description the awt6638 pa is designed to provide highly linear output for wcdma and lte handsets and data devices with high effciency at both high and low power modes. this help3dc tm pa can be used with an external switch mode power supply (smps) to improve its effciency and reduce current consumption further at medium and low output powers. a daisy chainable directional coupler is integrated in the module thus eliminating the need of external couplers. the device is manufactured on an advanced ingap hbt mmic technology offering state-of-the-art reliability, temperature stability, and ruggedness. there are two selectable bias modes that optimize effciency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. the self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, effciency, and linearity in a 50 ? system. aw t6638 1 2 3 4 5 10 9 8 7 6 v bat t rf in v mode2 (n/c) v mode 1 v en cp l ou t gn d cp l in rf ou t v cc bias control voltage regulation cp l gnd at slug (pad ) 02/2012
2 figure 2: pinout (x-ray top view) table 1: pin description v bat t rf in v mode2 (n/c) v mode 1 v en 1 2 3 4 56 7 8 9 10 cp l ou t gn d cp l in rf ou t v cc 1 2 3 4 56 7 8 9 10 pin name description 1 v batt battery voltage 2 rf in rf input 3 v mode2 (n/c) no connection 4 v mode1 mode control voltage 1 5 v en pa enable voltage 6 cpl out coupler output 7 gnd ground 8 cpl in coupler input 9 rf out rf output 10 v cc supply voltage preliminary data sheet - rev 1.3 02/2012 awt6638
3 electrical characteristics table 2: absolute minimum and maximum ratings stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. table 3: operating ranges the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defned in the electrical specifcations. notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. parameter min max unit supply voltage (v cc ) 0 +5 v battery voltage (v batt ) 0 +6 v control voltages (v mode1 , v enable ) 0 +3.5 v rf input power (p in ) - +10 dbm storage temperature (t stg ) -40 +150 c parameter min typ max unit comments operating frequency (f) 880 - 915 mhz supply voltage (v cc ) +0.5 +3.4 +4.35 v p out ? +28.5 dbm battery voltage (v batt ) +3.1 +3.4 +4.35 v p out ? +28.5 dbm enable voltage (v enable ) +1.35 0 +1.8 0 +3.1 +0.5 v pa "on" pa "shut down" mode control voltage (v mode1 ) +1.35 0 +1.8 - +3.1 +0.5 v low bias mode high bias mode rf output power (p out ) r99 wcdma, hpm hspa (mpr=0), hpm lte, hpm r99 wcdma, lpm hspa (mpr=0), lpm lte, lpm 27.7 (1) 26.7 (1) 26.7 (1) 16.2 (1) 15.2 (1) 15.2 (1) 28.5 27.5 27.5 17 16 16 28.5 27.5 27.5 17 16 16 dbm 3gpp ts 34.121-1, rel 8, table c.11.1.3 for wcdma subtest 1 ts 36.101 rel 8 for lte case temperature (t c ) -30 - +90 c preliminary data sheet - rev 1.3 02/2012 awt6638
4 table 4: electrical specifcations - wcdma operation (r99 waveform) (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) aclr and effciency measured at 897.5 mhz. (2) noise measured at 925 mhz to 960 mhz. pa ra me ter mi n ty p ma x unit co mments p out v mo de 1 ga in 25 13 29 16 31 18 db +2 8. 5 db m +1 7 db m 0 v 1. 8 v ac lr 1 at 5 mh z o ffs et (1 ) - - -4 1 -4 1 -3 8 -3 8 db c +2 8. 5 db m +1 7 db m 0 v 1. 8 v ac lr 2 at 10 mh z o ffs et - - -5 7 -5 6 -4 8 -4 8 db c +2 8. 5 db m +1 7 db m 0 v 1. 8 v po we r-a dded e ffi ci en cy (1 ) - - 40 22 - - % +2 8. 5 db m +1 7 db m 0 v 1. 8 v qu ie sce nt cu rre nt (i cq ) low bi as mo de -9 13 ma v mo de 1 = +1 .8 v mo de co nt ro l cu rre nt -0 .1 0. 25 ma th ro ug h v mod e pi n, v mode 1 = +1 .8 v en able cu rre nt -0 .4 0. 6m at hr ou gh v en able pi n ba tt cu rre nt -3 .0 5m at hr ou gh v ba tt pi n, v mo de 1 = +1 .8 v leak age cu rre nt -4 - a v ba tt = +4 .2 v, v cc = +4 .2 v, v en abl e = 0 v, v mo de 1 = 0 v no is e in re ce iv e ba nd (2 ) -- 133 - 131 db m/ hz p out < + 28. 5 db m, v mo de 1 = 0v -- 138 -1 36 db m/ hz p out < 17 db m, v mo de 1 = +1 .8 v ha rm on ic s 2f o 3f o, 4f o - - -40 -6 0 -3 5 -4 5 db c p out < + 28. 5 db m in pu t im pedan ce -- -v sw r co up li ng fa ct or -1 9- db dir ec ti vi ty -2 0- db co up le r in -out da is y ch ai n in se rt io n los s -0 .2 5- db 698 mh z to 2620 mh z pi n 8 to 6 s hut dow n mo de sp ur io us ou tp ut leve l (a ll sp ur io us ou tp ut s) -- -7 0d bc p out < + 28. 5 db m in - ban d l oad vswr < 5: 1 ou t- of - ban d l oad vsw r < 10 :1 ap pl ie s ov er al l o per at in g co nd it io ns load mi sm at ch st re ss wi th no per ma ne nt degr adat io n or fa il ur e 8: 1- -v sw ra ppli es ov er fu ll o per at in g ra ng e preliminary data sheet - rev 1.3 02/2012 awt6638
5 table 5: electrical specifcations- lte operation (rb = 12, start = 0, qpsk) (t c = +25 c, v cc = v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) aclr and effciency measured at 897.5 mhz. pa ra me te r mi n ty p ma x uni t co mme nt s p ou t v mo de 1 ga in 25 13 29 16 31 18 db + 27. 5 db m +1 6 db m 0 v 1. 8 v ac lr e- ut ra at 1 0 mh z o ffs et - - - 38 - 38 - - db c + 27. 5 db m +1 6 db m 0 v 1. 8 v ac lr 1 ut ra (1 ) at 7 .5 m hz o ffs et - - - 39 - 39 - - db c + 27. 5 db m +1 6 db m 0 v 1. 8 v ac lr 2 ut ra at 1 2. 5 mh z o ffs et - - - 60 - 60 - - db c + 27. 5 db m +1 6 db m 0 v 1. 8 v po we r-a dded e ffi ci en cy (1 ) - - 36. 5 20 - - % + 27. 5 db m +1 6 db m 0 v 1. 8 v sp ur io us o ut pu t lev el (a ll sp ur io us o ut pu ts ) -- <- 70 db c p ou t + 27. 5 db m in - ban d l oad vsw r < 5: 1 ou t- of - ban d l oad vsw r < 10 :1 a ppl ie s ov er a ll oper at in g co nd it io ns load mi sm at ch s tre ss wi th n o per ma ne nt degr adat io n or f ai lu re 8: 1- - vsw ra ppl ie s ov er f u ll oper at in g r an ge preliminary data sheet - rev 1.3 02/2012 awt6638
6 performance data plots: (wcdma operation at 898 mhz and 50 v system) 10 15 20 25 30 35 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 4: wcdma gain (db) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc figure 3: wcdma gain (db) over temperature (v batt = v cc = 3.4 v) figure 4: wcdma gain (db) over voltage (t c = 25 8c) 15 20 25 30 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 5: wcdma gain (db) over voltage (tc=25c ) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc 0 10 20 30 40 50 0 5 10 15 20 25 30 efficiency (%) pout (dbm) figure 6: wcdma pae (%) over temperature (vbatt=vcc=3.4v) - 30 3.4cc 25c 3.4vcc 90c 3.4vcc figure 5: wcdma pae (%) over temperature (v batt = v cc = 3.4 v) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 efficiency pout (dbm) figure 7: wcdma pae (%) over voltage (tc=25c) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 6: wcdma pae (%) over voltage (t c = 25 8c) - 55 - 50 - 45 - 40 - 35 - 30 - 25 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 8: wcdma acrl1 (dbc) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc figure 7: wcdma aclr1 (dbc) over temperature (v batt = v cc = 3.4 v) - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 9: wcdma aclr1 (dbc) over voltage (tc=25c) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 8: wcdma aclr1 (dbc) over voltage (t c = 25 8c) preliminary data sheet - rev 1.3 02/2012 awt6638
7 application information to ensure proper performance, refer to all related application notes on the anadigics web site: http://www.anadigics.com shutdown mode the power amplifer may be placed in a shutdown mode by applying logic low levels (see operating ranges table) to the v enable and v mode1 voltages. bias modes the power amplifer may be placed in either a low bias mode or a high bias mode by applying the appropriate logic level (see operating ranges table) to v mode1 . the bias control table lists the recommended modes of operation for various applications. v mode2 is not necessary for this pa. two operating modes are available to optimize current consumption. high bias/high power operating mode is for p out levels > 16 dbm. at around 17 dbm output power, the pa can be mode switched to low power mode for lowest quiescent current consumption. table 6: bias control (umts) application pout levels bias mdoe v enable v mode1 v cc v b at t high power (high bias mode) > +16 dbm high +1.8 v 0 v 1.5 - 4.35 v > 3.1 v med/low power (low bias mode) ? +17 dbm low +1.8 v +1.8 v 0.5 - 4.35 v > 3.1 v shutdown - shutdown 0 v 0 v 0.5 - 4.35 v > 3.1 v figure 9: recommended on/off timing sequence v en v cc note 1 rf in notes 1,2 off sequence referenced after 90 % of rise time referenced before 10 % of fall time on sequence on sequence start t_ 0n = 0 t_ 0n +1 s t_ 0n +3 s off sequence start t_ 0f f = 0 t_ 0f f+ 2 st _0 ff +3 s vcontrols venable/vmode(s ) rise/fall max 1 s defined at 10% to 90% of min/max voltage notes: (1) level might be changed after rf is on. (2) rf off defned as p in -30 dbm. (3) switching simultaneously between v mode and v en is not recommended. preliminary data sheet - rev 1.3 02/2012 awt6638
8 figure 10: evaluation circuit schematic figure 11: evaluation board layout gnd gnd cplout c 4 vbatt vcc c 2 c 3 c 6 c 1 ven r f i n vmode1 r f ou t c pli n gnd gnd vmode2 c3 2.2f ceramic rf in 1 6 7 10 8 5 4 3 v batt v mode1 rf out rf in gnd v cc v en cpl out v cc c1 v batt v mode 1 v en cpl in 29 v mode2 (n/c) c5 2.2 f c2 0.1f gnd at slug cpl in cpl out rf out 33pf c4 0.01 f preliminary data sheet - rev 1.3 02/2012 awt6638
9 figure 12: typical application circuit help3dc tm the awt6638 power amplifer module is based on anadigics proprietary help3dc? technology. the pa is designed to operate up to 17 dbm in the low power mode, thus eliminating the need for three gain state, while still maintaining low quiescent current and high effciency in low and medium power levels. average weighted effciency can be increased by using an external switch mode power supply (smps) or dc/dc converter to reduce v cc . the directional daisy chainable coupler is integrated within the pa module, therefore there is no need for external couplers. the awt6638 has an integrated voltage regulator, which eliminates the need for an external constant voltage source. the pa is turn on/off is controlled by v en pin. a single v mode control logic (v mode1 ) is needed to operate this device. awt6638 requires only two calibration sweeps for system calibration, thus saving calibration time. figure 11 shows one application example on mobile board. c1 and c2 are rf bypass caps and should be placed nearby pin 1 and pin 10. bypass caps c4 and c5 may not be needed. also a t matching topology is recommended at pa rf in and rf out ports to provide matching between input tx filter and duplexer / isolator. v bat t rf in v mo de 2 v mo de 1 v en rf ou t cp l in cp l ou t gn d v cc 1 c2 rf ou t tx filt er pa _r 0 pa _0 n c5 c4 bb g nd a t s lu g rf in 50 gn d gn d gn d gn d gn d to de te ct or c du pl exer v batt smps c6 gn d gn d c3 input matching output matching preliminary data sheet - rev 1.3 02/2012 awt6638
10 figure 13: package outline - 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 14: branding specifcation package package outline preliminary data sheet - rev 1.3 02/2012 awt6638
11 figure 15: recommended pcb layout information pcb and stencil design guideline preliminary data sheet - rev 1.3 02/2012 awt6638
12 component packaging figure 16: carrier tape pin 1 figure 17: reel preliminary data sheet - rev 1.3 02/2012 awt6638
13 ordering information order number temperature range package description component packaging awt6638q7 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module tape and reel, 2500 pieces per reel AWT6638P9 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module partial tape and reel warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. import ant notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifcations contained in advanced product information sheets and preliminary data sheets are subject to change prior to a products formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. preliminary data sheet - rev 1.3 02/2012 awt6638

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